onsemi FQP6N90C

Name: onsemi FQP6N90C
Brand: onsemi
SKU: FQP6N90C

Power Mosfet, N-channel, Qfet®, 900 V, 6 A, 2.3 Ω, TO-220

$ 1.083

EOL

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Distributor		SKU		Min	Pkg
Verical	2	FQP6N90C	391	259					1.204	1.073
Rochester Electronics		FQP6N90C	10,003					1.160	0.963	0.858	17h
Win Source		WS-FQP6N90C	63,600	30				1.422	1.156	1.156	18h
Worldway Electronics		FQP6N90C	16,990	7	Tube		1.051	1.001	1.001	1.001	17h
Maritex		FQP6N90C-U1	500	1		3.137	2.553	1.892	1.599	1.599	21h

Inventory History

3 month trend: -15.25%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQP6N90C.

Upverter

Technical Drawing1 page6 years ago

IHS

Fairchild Semiconductor

onsemi

element14 APAC

Inventory History

3 month trend:

-15.25%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2003-03-05

Lifecycle StatusEOL (Last Updated: 3 days ago)

LTB Date2022-06-21

LTD Date2022-12-21

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

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Descriptions

Descriptions of onsemi FQP6N90C provided by its distributors.

Power MOSFET, N-Channel, QFET®, 900 V, 6 A, 2.3 Ω, TO-220

onsemi

167W(Tc) 30V 5V@ 250¦ÌA 40nC@ 10 V 1N 900V 2.3¦¸@ 3A,10V 6A 1.77nF@25V TO-220-3 9.4mm

UnikeyIC

Power Field-Effect Transistor, 6A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.93ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:167W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:6A; Current Temperature:25°C; External Length / Height:4.83mm; External Width:10.67mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:2.3ohm; Package / Case:TO-220; Power Dissipation Pd:167W; Power Dissipation Pd:167W; Pulse Current Idm:24A; Termination Type:Through Hole; Voltage Vds Typ:900V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

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