onsemi FQP4N90C

Name: onsemi FQP4N90C
Brand: onsemi
SKU: FQP4N90C

Power Mosfet, N-channel, Qfet®, 900 V, 4 A, 4.2 Ω, TO-220

$ 1.045

EOL

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

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Distributor	SKU		Min	Pkg
Avnet	FQP4N90C	16,000	618					1.080	1.013	5d
Flip Electronics	FQP4N90C	14,000								7d
RS (Formerly Allied Electronics)	FQP4N90C	0	5	Bulk		1.090	1.010	1.010	1.010	9h
Farnell	FQP4N90C	0	1		2.029*	1.720*	1.464*	1.201*	1.201*	17h
Weyland Electronics Group Pte. Ltd.	FQP4N90C	3,000	1	Tape & Reel	0.481	0.481	0.481	0.481	0.481	2d

Inventory History

3 month trend: -48.39%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQP4N90C.

Upverter

Technical Drawing1 page6 years ago

Farnell

IHS

onsemi

Fairchild Semiconductor

Inventory History

3 month trend:

-48.39%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiFQP4N90C

onsemiFQP3N90

Price @ 1000

$ 1.045

$ 0.703

Stock

585,547

206,363

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220-3

TO-220

Drain to Source Voltage (Vdss)

900 V

Continuous Drain Current (ID)

4 A

3.6 A

Threshold Voltage

5 V

Rds On Max

4.2 Ω

4.25 Ω

Gate to Source Voltage (Vgs)

30 V

Power Dissipation

140 W

130 W

Input Capacitance

960 pF

910 pF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-06-30

Lifecycle StatusEOL (Last Updated: 3 days ago)

LTB Date2022-06-21

LTD Date2022-12-21

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

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Descriptions

Descriptions of onsemi FQP4N90C provided by its distributors.

Power MOSFET, N-Channel, QFET®, 900 V, 4 A, 4.2 Ω, TO-220

onsemi

TRANSISTOR, N-CHANNEL, QFET MOSFET, 900V, 4.0A, 4.2 OHM AT VGS 10V, TO-220

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 900V 4A 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 900V 4A TO-220

Win Source

N-Channel 900 V 4.2 O 22 nC Flange Mount QFET Mosfet - TO-220AB

Future Electronics

QFET 900 V N-CHANNEL MOSFET Power Field-Effect Transistor, 4A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET, N-CH, 900V, 4A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:900V; On Resistance Rds(on):3.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Powe

element14 APAC

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor

MOSFET, N, TO-220; Transistor Polarity:N; Max Current Id:4.2A; Max Voltage Vds:900V; On State Resistance:3.3ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:30V; Power Dissipation:140W; Operating Temperature Range:-55ºC to +150ºC; Transistor Case Style:TO-220; No. of Pins:3; SVHC:Cobalt dichloride; Case Style:TO-220; Cont Current Id:4.2A; Device Marking:FQP4N90; Max On State Resistance:3.3ohm; Max Voltage Vgs th:5V; Power Dissipation Pd:140W; Pulse Current Idm:16.8A; Termination Type:Through Hole; Transistor Type:MOSFET; Typ Voltage Vds:900V; Typ Voltage Vgs th:5V; Voltage Vgs Rds on Measurement:10V; SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)

Farnell