STMicroelectronics STP7NK80Z
$ 1.424
Production
Inventory History
3 month trend: -13.73%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP7NK80Z.
CAD Models
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Descriptions
Descriptions of STMicroelectronics STP7NK80Z provided by its distributors.
N-channel 800 V, 1.5 Ohm typ., 5.2 A Zener-protected SuperMESH Power MOSFET in a TO-220 package
STP7NK80Z N-CHANNEL MOSFET TRANSISTOR, 5.2 A, 800 V, 3-PIN TO-220
Trans MOSFET N-CH 800V 5.2A 3-Pin(3+Tab) TO-220AB Tube
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:5.2A; Resistance, Rds On:1.8ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3.75V; Case Style:TO-220; Termination;RoHS Compliant: Yes
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:5.2A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Avalanche Single Pulse Energy Eas:210mJ; Capacitance Ciss Typ:1138pF; Current Id Max:5.2A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:1.8ohm; Package / Case:TO-220; Pin Configuration:a; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Power Dissipation Ptot Max:125W; Pulse Current Idm:20.8A; Reverse Recovery Time trr Typ:530ns; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Voltage Vgs th Min:3V
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -13.73%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)5.2 A
Current Rating5.2 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance1.8 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.138 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation125 W
Rds On Max1.8 Ω
Rise Time12 ns
Threshold Voltage3.75 V
Turn-Off Delay Time45 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)800 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP7NK80Z.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant