STMicroelectronics STP3NK90Z
$ 1.001
Production
Inventory History
3 month trend: -30.69%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP3NK90Z.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
Descriptions
Descriptions of STMicroelectronics STP3NK90Z provided by its distributors.
N-channel 900 V, 4.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) Power MOSFET in TO-220 package
N-Channel 900 V 4.8 Ohm Flange Mount SuperMESH Power MosFet - TO-220
STP3NK90Z N-CHANNEL MOSFET TRANSISTOR, 3 A, 900 V, 3-PIN TO-220
Trans MOSFET N-CH 900V 3A 3-Pin(3+Tab) TO-220AB Tube
Power MOSFET, N Channel, 900 V, 3 A, 4.1 ohm, TO-220, Through Hole
N-CHANNEL 900V-4.1 OHM-3A TO-220 ZENER-PROTECTED SUPERMESH POWER MOSFET Power Field-Effect Transistor, 3A I(D), 900V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 4.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -30.69%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight9.071847 g
Technical
Continuous Drain Current (ID)3 A
Current Rating3 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance4.8 Ω
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance590 pF
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation90 W
Rds On Max4.8 Ω
Resistance4.8 Ω
Rise Time7 ns
Threshold Voltage3.75 V
Turn-Off Delay Time45 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)900 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP3NK90Z.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant