onsemi FQP4N80

Name: onsemi FQP4N80
Brand: onsemi
SKU: FQP4N80

Power Mosfet, N-channel, Qfet®, 800 V, 3.9 A, 3.6 Ω, TO-220

$ 0.783

EOL

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor	SKU		Min
Arrow Electronics	FQP4N80	40	1	0.654	0.654	0.654	0.654	0.654
Rochester Electronics	FQP4N80	230				1.100	0.913	0.814	11h
Farnell	FQP4N80	0	1	1.233*	1.233*	0.683*	0.415*	0.415*	6h
Component Stockers USA	FQP4N80	1,174		0.960	0.960	0.910	0.820	0.820	>1wk
Win Source	WS-FQP4N80	2,841	35			1.271	1.033	1.033	12h

Inventory History

3 month trend: -1.46%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQP4N80.

IHS

Datasheet8 pages12 years ago

Datasheet0 pages0 years ago

Future Electronics

onsemi

Fairchild Semiconductor

iiiC

Inventory History

3 month trend:

-1.46%

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-11-10

Lifecycle StatusEOL (Last Updated: 1 day ago)

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)

Related Parts

onsemiFQP5N80

MOSFET N-CH 800V 4.8A TO-220

Details

onsemiFQP3N80C

Power MOSFET, N-Channel, QFET®, 800 V, 3.0 A, 4.8 Ω, TO-220

Details

onsemiFQP5N60C

Power MOSFET, N-Channel, QFET®, 600 V, 4.5 A, 2.5 Ω, TO-220

Details

VishayIRFBE30PBF

IRFBE30PBF N-CHANNEL MOSFET TRANSISTOR, 4.1 A, 800 V, 3-PIN TO-220AB

Details

VishayIRFBG30PBF

Single N-Channel 1000 V 5 Ohms Flange Mount Power Mosfet - TO-220-3

Details

VishayIRFBF30PBF

Single N-Channel 900 V 3.7 Ohms Flange Mount Power Mosfet - TO-220AB

Details

Descriptions

Descriptions of onsemi FQP4N80 provided by its distributors.

Power MOSFET, N-Channel, QFET®, 800 V, 3.9 A, 3.6 Ω, TO-220

onsemi

Transistor,mosfet,n-Channel,800V V(Br)Dss,3.9A I(D),to-220 Rohs Compliant: Yes |Onsemi FQP4N80

Newark

Trans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) TO-220AB Rail

Avnet

Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.9A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 3.6ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 13

Farnell

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor