onsemi FQD19N10LTM

Name: onsemi FQD19N10LTM
Brand: onsemi
SKU: FQD19N10LTM

N-Channel Power MOSFET, Logic Level, QFET®, 100 V, 15.6 A, 100 mΩ, DPAK

$ 0.494

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Distributor		SKU		Min	Pkg
Avnet	2	FQD19N10LTM	147,500	2500						0.398	4d
Newark	3	FQD19N10LTM	336	1	Cut Tape	1.750	1.170	0.948	0.948	0.948
Verical	3	FQD19N10LTM	1,128	644					0.538	0.479
Rochester Electronics		FQD19N10LTM	7,838					0.518	0.430	0.383	15h
DigiKey	3	FQD19N10LTMCT-ND	10,319	1	Cut Tape	1.700	1.075	0.717	0.514	0.400

Inventory History

3 month trend: -8.97%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

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Newark

Datasheet0 pages0 years ago

IHS

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onsemi

Fairchild Semiconductor

Inventory History

3 month trend:

-8.97%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-10-19

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FQD19N10LTM provided by its distributors.

N-Channel Power MOSFET, Logic Level, QFET®, 100 V, 15.6 A, 100 mΩ, DPAK

onsemi

Power MOSFET, N Channel, 100 V, 15.6 A, 0.074 ohm, TO-252AA, Surface Mount

Avnet

Power Field-Effect Transistor, 15.6A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Semicontronic

MOSFET, N CH, 100V, 15.6A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 15.6A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.074ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 50W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

Farnell

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Fairchild Semiconductor