Vishay IRFR110PBF

Name: Vishay IRFR110PBF
Brand: Vishay
SKU: IRFR110PBF

Transistor: N-MOSFET; unipolar; 100V; 4.3A; 0.54ohm; 25W; -55+150 deg.C; SMD; TO252(DPAK)

$ 0.35

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Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Newark		IRFR110PBF	2,595	1		1.120	0.681	0.575	0.478	0.478
Verical	2	IRFR110PBF	3,741	29				0.394	0.336	0.325
Arrow Electronics		IRFR110PBF	3,750	1		0.452	0.452	0.391	0.333	0.326
TME	2	IRFR110PBF	4,498	1		0.980	0.567	0.532	0.492	0.384	1h
DigiKey		IRFR110PBF-ND	2,552	1	Tube	2.070	2.070	0.929	0.699	0.541

Inventory History

3 month trend: +7.02%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay IRFR110PBF.

Newark

Datasheet13 pages4 years ago

Datasheet11 pages14 years ago

Datasheet8 pages16 years ago

Datasheet11 pages9 years ago

Datasheet11 pages11 years ago

element14 APAC

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RS (Formerly Allied Electronics)

Farnell

Inventory History

3 month trend:

+7.02%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-07-21

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Vishay IRFR110PBF provided by its distributors.

Transistor: N-MOSFET; unipolar; 100V; 4.3A; 0.54ohm; 25W; -55+150 deg.C; SMD; TO252(DPAK)

Maritex

Power MOSFET, N Channel, 100 V, 4.3 A, 0.54 ohm, TO-252 (DPAK), Surface Mount

EBV Elektronik

POWER MOSFET Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

N CHANNEL MOSFET, 100V, 4.3A, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: No

Newark

MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:5°C/W; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; SMD Marking:IRFR110; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC