onsemi FDT86106LZ

Name: onsemi FDT86106LZ
Brand: onsemi
SKU: FDT86106LZ

Mosfet N-ch 100V 3.2A SOT-223-4 / Trans Mosfet N-ch 100V 3.2A 4-PIN(3+TAB) SOT-223 T/r

$ 0.682

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Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Future Electronics		FDT86106LZ	4,000	4K	Tape & Reel					0.780
Verical	2	FDT86106LZ	3,431	3			1.103	0.765	0.616	0.554
Arrow Electronics		FDT86106LZ	3,431	1		1.458	1.103	0.765	0.616	0.588
Master Electronics		FDT86106LZ	4,000	50				1.278	0.748	0.660
Onlinecomponents.com		FDT86106LZ	4,000	50	Bulk			1.278	0.748	0.660

Inventory History

3 month trend: -88.22%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDT86106LZ.

Upverter

Datasheet7 pages3 years ago

Technical Drawing1 page6 years ago

IHS

JRH Electronics

onsemi

Future Electronics

Inventory History

3 month trend:

-88.22%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2010-12-06

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDT86106LZ provided by its distributors.

MOSFET N-CH 100V 3.2A SOT-223-4 / Trans MOSFET N-CH 100V 3.2A 4-Pin(3+Tab) SOT-223 T/R

Win Source

FDT86106LZ Series 100 V 3.2 A 108 mOhm N-Ch PowerTrench Mosfet - SOT-223-3

Future Electronics

N-Channel PowerTrench® MOSFET 100V, 3.2A, 108mΩ

onsemi

MOSFET, N CH, 100V, 3.2A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:12A; Voltage Vgs th Max:2.2V

Farnell

This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.

Fairchild Semiconductor