onsemi IRFM120ATF
$ 0.522
EOL
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Inventory History
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CAD Models
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CAD Models
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Supply Chain
Country of OriginSouth Korea
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-01-01
Lifecycle StatusEOL (Last Updated: 2 days ago)
LTB Date2025-09-12
LTD Date2026-03-12
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
Related Parts
InfineonBSP372NH6327XTSA1
Power MOSFET, N Channel, 100 V, 1.8 A, 230 Milliohms, SOT-223, 4 Pins, Surface Mount
Descriptions
Descriptions of onsemi IRFM120ATF provided by its distributors.
Power MOSFET, N-Channel, A-FET, 100 V, 2.3 A, 0.2 Ω, SOT-223
Trans MOSFET N-CH 100V 2.3A 4-Pin(3+Tab) SOT-223 T/R
Avnet Japan
场效应管, MOSFET, N沟道, 100V, 2.3A, SOT-223-3;
MOSFET ADV PWR 100V 2.3A SOT-223
Power Field-Effect Transistor, 2.3A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Af 100V 200Mohm Sot223 Rohs Compliant: Yes
2.4W(Ta) 20V 4V@ 250µA 22nC@ 10 V 1individualNChannel 100V 200mΩ@ 1.15A,10V 2.3A 480pF@25V SOT-223-4 SMD mount 6.5mm*3.5mm*1.8mm
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-223
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals4
Weight188 mg
Technical
Continuous Drain Current (ID)2.3 A
Current Rating2.3 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vds)100 V
Element ConfigurationSingle
Fall Time28 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance480 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.4 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.4 W
Rds On Max200 mΩ
Resistance200 MΩ
Rise Time14 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time36 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)100 V
Dimensions
Height1.8 mm
Length6.7 mm
Width3.7 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Compliance Statements