onsemi FDS8984

Name: onsemi FDS8984
Brand: onsemi
SKU: FDS8984

Transistor MOSFET Array Dual N-CH 30V 7A 8-Pin SOIC T/R

$ 0.247

NRND

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Newark	2	FDS8984	7,459	5	Cut Tape		0.795	0.484	0.484	0.484
Verical	2	FDS8984	1,846	26				0.297	0.232	0.232
Arrow Electronics		FDS8984	1,846	1		0.447	0.373	0.297	0.232	0.232
Master Electronics		FDS8984	5,000	100				0.222	0.217	0.205
Onlinecomponents.com		FDS8984	5,000	100	Bulk			0.222	0.217	0.205

Inventory History

3 month trend: -47.48%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDS8984.

element14 APAC

Datasheet6 pages25 years ago

Datasheet0 pages0 years ago

Upverter

IHS

Future Electronics

onsemi

Inventory History

3 month trend:

-47.48%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiFDS8984

Diodes Inc.DMN3033LSD-13

Price @ 1000

$ 0.247

$ 0.335

Stock

846,547

256,667

Authorized Distributors

Mount

Surface Mount

Case/Package

SOIC

SOP

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

7 A

6.9 A

Threshold Voltage

1.7 V

Rds On Max

23 mΩ

20 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

1.6 W

2 W

Input Capacitance

635 pF

725 pF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-02-28

Lifecycle StatusNRND (Last Updated: 2 hours ago)

Manufacturer Lifecycle StatusACTIVE, NOT REC (Last Updated: 2 hours ago)

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Descriptions

Descriptions of onsemi FDS8984 provided by its distributors.

Transistor MOSFET Array Dual N-CH 30V 7A 8-Pin SOIC T/R

Avnet Japan

N-Channel 30 V 23 mOhm SMT PowerTrench Mosfet - SOIC-8

Future Electronics

N-Channel PowerTrench® MOSFET 30V, 7A, 23mΩ

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MOSFET 2N-Channel VDS=30V ID=7A RDS(on)=23mΩ SOIC8_150MIL

HQonline

Power Field-Effect Transistor, 7A I(D), 30V, 0.023ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

Fairchild Semiconductor