onsemi FDS8958A

Name: onsemi FDS8958A
Brand: onsemi
SKU: FDS8958A

Mosfet N/p-ch 30V 7A/5A 8SOIC / Trans Mosfet N/p-ch 30V 7A/5A 8-PIN SOIC T/r

$ 0.3

EOL

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	FDS8958A	134,095					0.361	0.300	0.267	2h
Newark	2	FDS8958A	0	2500	Cut Tape					0.486
element14 APAC	3	FDS8958A	0	1	Tape & Reel	874.19*	874.19*	874.19*	874.19*	874.19*	20h
Farnell	4	FDS8958A	0	1	Custom Reel	703.65*	703.65*	703.65*	703.65*	703.65*	1h
Microchip USA		FDS8958A	473	3K	Bulk					0.792	4d

Inventory History

3 month trend: -1.44%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDS8958A.

IHS

Datasheet0 pages0 years ago

Datasheet8 pages19 years ago

Upverter

Newark

DigiKey

Farnell

Inventory History

3 month trend:

-1.44%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1998-06-01

Lifecycle StatusEOL (Last Updated: 10 hours ago)

LTB Date2024-06-22

LTD Date2024-12-22

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 10 hours ago)

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Descriptions

Descriptions of onsemi FDS8958A provided by its distributors.

MOSFET N/P-CH 30V 7A/5A 8SOIC / Trans MOSFET N/P-CH 30V 7A/5A 8-Pin SOIC T/R

Win Source

Dual N & P-Channel 30 V 0.028 Ohm Surface Mount PowerTrench Mosfet - SOIC-8

Future Electronics

Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET, DUAL, NP, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):28mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id N Channel 2:7A; Cont Current Id P Channel:5A; Current Id Max:7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:2; On State Resistance N Channel Max:28mohm; On State Resistance P Channel Max:52mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:20A; Pulse Current Idm N Channel 2:20A; Pulse Current Idm P Channel:20A; SMD Marking:FDS8958A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V

element14 APAC