onsemi FDS6912A

Name: onsemi FDS6912A
Brand: onsemi
SKU: FDS6912A

Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 6A, 28mΩ

$ 0.297

EOL

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Verical	3	FDS6912A	2,768	21				0.302	0.287	0.287
Arrow Electronics		FDS6912A	2,768	1		0.322	0.317	0.302	0.287	0.287
Master Electronics		FDS6912A	2,500	2500						0.271
Onlinecomponents.com		FDS6912A	2,500	2500	Bulk					0.271
Rochester Electronics	2	FDS6912A	4,500					0.358	0.297	0.265	21h

Inventory History

3 month trend: -17.90%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDS6912A.

IHS

Datasheet5 pages22 years ago

Datasheet6 pages4 years ago

Upverter

Future Electronics

onsemi

Newark

Inventory History

3 month trend:

-17.90%

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1998-06-01

Lifecycle StatusEOL (Last Updated: 2 days ago)

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)

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Descriptions

Descriptions of onsemi FDS6912A provided by its distributors.

Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 6A, 28mΩ

onsemi

Transistor MOSFET Array Dual N-CH 30V 6A 8-Pin SOIC T/R

Avnet Japan

DUAL N-CHANNEL, LOGIC LEVEL, POWERTRENCH MOSFET Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET, DUAL, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:1.6W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6A; Package / Case:SOIC; Power Dissipation Pd:1.6W; Power Dissipation Pd:1.6W; Pulse Current Idm:20A; SMD Marking:FDS6912A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V

element14 APAC

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Fairchild Semiconductor