onsemi FDS89161
$ 0.785
Production
Inventory History
3 month trend: -44.06%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-07-13
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Related Parts
Descriptions
Descriptions of onsemi FDS89161 provided by its distributors.
Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 2.7A, 105mΩ
Dual N-Channel PowerTrench® MOSFET 100 V, 2.7 A, 105 mΩ | MOSFET 2N-CH 100V 2.7A 8-SOIC
2N-Channel 100 V 2.7 A 105 mOhm Shielded Power Trench Mosfet - SOIC-8
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
MOSFET, NN CH, 100V, 2.7A, 8SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.086ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -44.06%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight187 mg
Technical
Continuous Drain Current (ID)2.7 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance105 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationDual
Fall Time1.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance210 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.1 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingTape and Reel
Power Dissipation1.6 W
Rds On Max105 mΩ
Rise Time1.3 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time7.3 ns
Turn-On Delay Time4.2 ns
Dimensions
Height1.75 mm
Length4 mm
Width5 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements