onsemi FDS6630A

Name: onsemi FDS6630A
Brand: onsemi
SKU: FDS6630A

N-Channel PowerTrenchTM MOSFET, Logic Level, 30V, 6.5A 38mΩ

$ 0.241

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Avnet		FDS6630A	3,767	3847					0.274	5d
Verical		FDS6630A	22,006	1245					0.269
Rochester Electronics		FDS6630A	23,160				0.291	0.241	0.215	14h
Flip Electronics		FDS6630A	3,767							6d
Farnell	2	FDS6630A	0	5	Cut Tape	0.605*	0.281*	0.281*	0.281*	14h

Inventory History

3 month trend: -0.41%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDS6630A.

Upverter

Technical Drawing1 page6 years ago

Fairchild Semiconductor

IHS

onsemi

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Inventory History

3 month trend:

-0.41%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1999-02-01

Lifecycle StatusObsolete (Last Updated: 2 days ago)

LTB Date2021-02-17

LTD Date2021-08-17

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)

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Descriptions

Descriptions of onsemi FDS6630A provided by its distributors.

N-Channel PowerTrenchTM MOSFET, Logic Level, 30V, 6.5A 38mΩ

onsemi

Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R

Verical

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Fairchild Semiconductor

MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):38mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:40A; SMD Marking:FDS6630A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1.7V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V

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