onsemi FDS5680

Name: onsemi FDS5680
Brand: onsemi
SKU: FDS5680

Transistor MOSFET Negative Channel 60 Volt 8A 8-Pin SOIC N T/R

$ 1.175

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Avnet		FDS5680	180,000	569					1.175	1.100	4d
Flip Electronics		FDS5680	180,000								5d
element14 APAC	3	FDS5680	0	1	Tape & Reel	1,766*	1,766*	1,766*	1,766*	1,766*	1h
Farnell	4	FDS5680	0	1	Custom Reel	1,594*	1,594*	1,594*	1,594*	1,594*	7h
Weyland Electronics Group Pte. Ltd.		FDS5680	5,000	1	Tape & Reel	4.808	4.808	4.808	4.808	4.808	13h

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDS5680.

IHS

Datasheet7 pages3 years ago

Datasheet5 pages26 years ago

Upverter

Farnell

onsemi

element14 APAC

Inventory History

3 month trend:

+0.00%

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1999-02-01

Lifecycle StatusObsolete (Last Updated: 1 day ago)

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 day ago)

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Descriptions

Descriptions of onsemi FDS5680 provided by its distributors.

Transistor MOSFET Negative Channel 60 Volt 8A 8-Pin SOIC N T/R

Jameco

N-Channel PowerTrenchTM MOSFET, 60V, 8A, 20mΩ

onsemi

2.5W(Ta) 20V 4V@ 250¦ÌA 42nC@ 10V 1N 60V 20m¦¸@ 8A,10V 8A 1.85nF@15V SOIC-8 4.9mm*3.9mm*1.75mm

UnikeyIC

Trans MOSFET N-CH 60V 8A 8-Pin SOIC T/R / MOSFET N-CH 60V 8A 8-SO

Win Source

N-Channel 60 V 20 mOhm PowerTrench Mosfet SOIC-8

Future Electronics

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:8A; On Resistance, Rds(on):0.02ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

Newark

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Fairchild Semiconductor

MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:60V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 25°C:8A; Current Id Max:8A; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; Pulse Current Idm N Channel 2:50A; SMD Marking:FDS5680; Termination Type:SMD; Voltage Vds:60V; Voltage Vds Typ:60V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:4V

element14 APAC