onsemi FDS4935A
$ 0.446
Production
Inventory History
3 month trend: +20.13%
CAD Models
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Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-07-18
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descriptions
Descriptions of onsemi FDS4935A provided by its distributors.
Transistor MOSFET Array Dual P-CH 30V 7A 8-Pin SOIC T/R
Avnet Japan
Dual P-Channel PowerTrench® MOSFET,- 30V, -7A, 23mΩ
Dual P-Channel 30 V 23 mOhm SMT PowerTrench Mosfet SOIC-8
ON SEMICONDUCTOR - FDS4935A - DUAL P CHANNEL MOSFET, -30V, SOIC
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 20V).
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +20.13%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)7 A
Current7 A
Current Rating-7 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage-30 V
Element ConfigurationDual
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.233 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature175 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-1.6 V
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation900 mW
Rds On Max23 mΩ
Resistance23 MΩ
Rise Time10 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-1.6 V
Turn-Off Delay Time48 ns
Turn-On Delay Time13 ns
Voltage30 V
Voltage Rating (DC)-30 V
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements