onsemi FDS3590

Name: onsemi FDS3590
Brand: onsemi
SKU: FDS3590

N-Channel PowerTrench® MOSFET, 80V, 6.5A, 39mΩ

$ 0.428

Production

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor		SKU		Min	Pkg
Avnet		FDS3590	2,500	2500						0.365	3d
DigiKey	2	FDS3590CT-ND	2,485	1	Cut Tape	1.600	1.008	0.670	0.479	0.479
Newark		FDS3590	0	2500	Tape & Reel					0.529
Onlinecomponents.com		FDS3590	0	50	Bulk			0.418	0.378	0.345
Master Electronics		FDS3590	0	50				0.418	0.378	0.345

Inventory History

3 month trend: -26.94%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDS3590.

Upverter

Technical Drawing1 page6 years ago

Newark

Fairchild Semiconductor

IHS

onsemi

Inventory History

3 month trend:

-26.94%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-01-04

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDS3590 provided by its distributors.

N-Channel PowerTrench® MOSFET, 80V, 6.5A, 39mΩ

onsemi

Trans MOSFET N-CH 80V 6.5A 8-Pin SOIC T/R

Richardson RFPD

MOSFET, N-CH, 80V, 6.5A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.032ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe

Farnell

2.5W(Ta) 20V 4V@ 250¦ÌA 35nC@ 10 V 1N 80V 39m¦¸@ 6.5A,10V 6.5A 1.18nF@40V SOIC-8 4.9mm*3.9mm*1.75mm

UnikeyIC

Small Signal Field-Effect Transistor, 6.5A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

Fet 80V 39.0 Mohm So8 Rohs Compliant: Yes

Newark

SO8, NCH, 80V, 600A GATEOX, 39/44MO(10/6V), TRENCH

Avnet

SMALL SIGNAL FIELD-EFFECT TRANSI

ODG (Origin Data Global)

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Fairchild Semiconductor