onsemi FDPF17N60NT

Name: onsemi FDPF17N60NT
Brand: onsemi
SKU: FDPF17N60NT

N-Channel Power MOSFET, UniFETTM II, 600 V, 17 A, 340 mΩ, TO-220F

$ 1.567

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Distributor		SKU		Min	Pkg
Avnet		FDPF17N60NT	1,000	1K					1.753	1.573	5d
Verical	5	FDPF17N60NT	1,000	1K					1.544	1.544
Rochester Electronics	2	FDPF17N60NT	11,689					1.530	1.370	1.290	10h
DigiKey		FDPF17N60NTFS-ND	718	1	Tube	4.390	4.390	2.045	1.567	1.534
Flip Electronics		FDPF17N60NT	1,000								6d

Inventory History

3 month trend: +6.41%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDPF17N60NT.

IHS

Datasheet9 pages2 years ago

Datasheet8 pages12 years ago

Master Electronics

Farnell

onsemi

Fairchild Semiconductor

Inventory History

3 month trend:

+6.41%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-07-21

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDPF17N60NT provided by its distributors.

N-Channel Power MOSFET, UniFETTM II, 600 V, 17 A, 340 mΩ, TO-220F

onsemi

Power Field-Effect Transistor, 17A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET,N CH,600V,17A,TO220F; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.29ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:62.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)

Farnell

UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts..

Fairchild Semiconductor