onsemi FDP8880

Name: onsemi FDP8880
Brand: onsemi
SKU: FDP8880

N-Channel 30 V 11.6 mOhm PowerTrench Mosfet - TO-220AB-3

$ 0.547

Obsolete

Datasheet

Manufacturer Page

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor

SKU

Min

Pkg

Bulk Pricing

Verical

FDP8880

44,280

569

USD

0.608

0.542

Rochester Electronics

USD

600

Tray

USD

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDP8880.

IHS

Datasheet11 pages21 years ago

Datasheet0 pages0 years ago

onsemi

Farnell

element14 APAC

Fairchild Semiconductor

Inventory History

3 month trend:

+0.00%

CAD Models

Download onsemi FDP8880 symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
Component Search Engine	SymbolFootprint	3D	Download
SnapEDA	Footprint		Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2005-02-28

Lifecycle StatusObsolete (Last Updated: 3 days ago)

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

Related Parts

InfineonIRLB8721PBF

Single N-Channel 30 V 8.7 mOhm 13 nC HEXFET® Power Mosfet - TO-220-3

Details

onsemiFDP7030BL

N-Channel PowerTrench® MOSFET, Logic Level, 30V, 60A, 9mΩ

Details

onsemiNTP65N02R

Trans MOSFET N-CH 25V 65A 3-Pin(3+Tab) TO-220AB Rail

Details

onsemiNTP65N02RG

Tube Through Hole N-Channel Single Mosfet Transistor 7.6A Ta 58A Tc 58A 62.5W 10ns

Details

InfineonIRF3708PBF

Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) | MOSFET N-CH 30V 62A TO-220AB

Details

InfineonIRL3103PBF

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 12 Milliohms;ID 64A;TO-220AB;PD 94W;VGS +/-1

Details

Descriptions

Descriptions of onsemi FDP8880 provided by its distributors.

N-Channel 30 V 11.6 mOhm PowerTrench Mosfet - TO-220AB-3

Future Electronics

N-Channel PowerTrench® MOSFET 30V, 54A, 11.6mΩ

onsemi

Trans MOSFET N-CH 30V 11A 3-Pin(3+Tab) TO-220AB Tube

Avnet

30V,54A,11.6 OHMS,NCH,TO220,POWER TRENCH MOSFET

Master Electronics

Power Field-Effect Transistor, 11A I(D), 30V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

Fairchild Semiconductor

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:54A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:55W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:54A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Pd:55W; Power Dissipation Pd:55W; Power Dissipation Ptot Max:55W; Pulse Current Idm:65A; Termination Type:Through Hole; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC