onsemi FDP8442
$ 3.105
Obsolete
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-06-28
Lifecycle StatusObsolete (Last Updated: 6 months ago)
Related Parts
InfineonIRF1404ZPBF
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 2.7Milliohms;ID 190A;TO-220AB;PD 220W;-55de
VishaySUP90N04-3M3P-GE3
MOSFET,N CH,W DIODE,40V,90A,TO220AB; Transistor Polarity:N Channel; Continuous D
NXP SemiconductorsPSMN8R0-40PS
Mosfet Transistor, N Channel, 77 A, 40 V, 6.2 Mohm, 10 V, 3 V Rohs Compliant: Yes
InfineonIRLB8743PBF
MOSFET N-CH 30V 78A TO220AB N-Channel 30 V 78A (Tc) 140W (Tc) Through Hole TO-220AB
Descriptions
Descriptions of onsemi FDP8442 provided by its distributors.
N-Channel PowerTrench® MOSFET 40V, 80A, 3.1mΩ | MOSFET N-CH 40V 80A TO-220AB
Trans MOSFET N-CH 40V 23A Automotive 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 23A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
40V, 80A, 2.8 OHM NCH , POWER TRENCH MOSFET
254W(Tc) 4V@ 250µA 235nC@ 10V 1individualNChannel 40V 3.1mΩ@ 80A,10V 12.2pF@25V TO-220-3 Through hole mounting
MOSFET N-CH 40V 23A/80A TO220-3
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)23 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance3.1 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time17.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance12.2 nF
Max Operating Temperature175 °C
Max Power Dissipation254 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation254 W
Rds On Max3.1 mΩ
Rise Time19.3 ns
Turn-Off Delay Time57 ns