Infineon IRF2804PBF

Transistor MOSFET N Channel 40 Volt 280.6 Amp 3 Pin 3+ Tab TO-220

MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 1.8Milliohms;ID 280A;TO-220AB;PD 330W;-55de

Infineon Technologies N channel HEXFET power MOSFET, 40 V, 75 A, TO-220, IRF2804PBF

Single N-Channel 40 V 2.3 mOhm 240 nC HEXFET® Power Mosfet - TO-220-3

40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 300 W

40V 75A 300W 2.3m´Î@10V75A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

Trans MOSFET N-CH 40V 280A 3-Pin(3+Tab) TO-220

Power Field-Effect Transistor, 75A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC; Consumer Full-Bridge; Full-Bridge; Push-Pull

N Channel Mosfet, 40V, 270A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:270A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRF2804PBF.

MOSFET, N, 40V, 280A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:280A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:270A; Device Marking:IRF2804PBF; Junction to Case Thermal Resistance A:0.45°C/W; On State resistance @ Vgs = 10V:2.3ohm; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:1080A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V