onsemi FDP2710-F085
Trans MOSFET N-CH 250V 4A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101
$ 1.901
EOL
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Inventory History
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CAD Models
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Alternate Parts
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-08-20
Lifecycle StatusEOL (Last Updated: 5 days ago)
LTB Date2009-11-04
LTD Date2010-05-04
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
Related Parts
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250V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB Full-Pak package
Descriptions
Descriptions of onsemi FDP2710-F085 provided by its distributors.
Trans MOSFET N-CH 250V 4A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101
N-Channel PowerTrench® MOSFET 250V, 50A, 47mΩ
Power Field-Effect Transistor, 4A I(D), 250V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
403W(Tc) 30V 5V@ 250µA 101nC@ 10 V 1individualNChannel 250V 47mΩ@ 50A,10V 4A 5.69nF@25V TO-220-3 Through hole mounting 10.67mm*4.7mm*16.3mm
This N-Channel MOSFET is produced using Fairchil Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)4 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance47 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time154 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance5.69 nF
Max Operating Temperature150 °C
Max Power Dissipation260 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation403 W
Rds On Max47 mΩ
Rise Time252 ns
Turn-Off Delay Time112 ns
Turn-On Delay Time80 ns
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements