onsemi FDP020N06B-F102
N-Channel PowerTrench® MOSFET 60V, 313A, 2mΩ
$ 2.914
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Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-01-04
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descriptions
Descriptions of onsemi FDP020N06B-F102 provided by its distributors.
N-Channel PowerTrench® MOSFET 60V, 313A, 2mΩ
FDP020N06B Series 60 V 313 A 2 mOhm N-Channel PowerTrench Mosfet - TO-220-3
Trans MOSFET N-CH Si 60V 313A 3-Pin(3+Tab) TO-220 Tube
Power Field-Effect Transistor, 120A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
333W(Tc) 20V 4.5V@ 250µA 268nC@ 10 V 1individualNChannel 60V 2mΩ@ 100A,10V 120A 20.93nF@30V TO-220-3 Through hole mounting 10.67mm*4.7mm*16.3mm
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time42 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance20.93 nF
Max Operating Temperature175 °C
Max Power Dissipation333 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation333 W
Rds On Max2 mΩ
Resistance2 MΩ
Rise Time62 ns
Turn-Off Delay Time112 ns
Turn-On Delay Time74 ns
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements