STMicroelectronics STP80NF06
$ 1.295
Obsolete
Inventory History
3 month trend: -19.61%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP80NF06.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-11-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-10-01
LTD Date2023-04-01
Related Parts
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InfineonAUIRF1010Z
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
Descriptions
Descriptions of STMicroelectronics STP80NF06 provided by its distributors.
STP80NF06 N-CHANNEL MOSFET TRANSISTOR, 80 A, 60 V, 3-PIN TO-220
N-CHANNEL 60V 0.0065 Ohm 80A TO-220 STripFET™ II POWER MOSFET
Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 80A I(D), 60V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 60V, 80A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0065ohm; R; Available until stocks are exhausted Alternative available
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -19.61%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Continuous Drain Current (ID)80 A
Current Rating80 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.85 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage60 V
Min Operating Temperature-65 °C
Number of Elements1
Power Dissipation300 W
Rds On Max10 mΩ
Resistance8 mΩ
Rise Time85 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time70 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)60 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP80NF06.
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant