onsemi FDMS3572

Name: onsemi FDMS3572
Brand: onsemi
SKU: FDMS3572

N-Channel UltraFET Trench® MOSFET 80V, 22A, 16.5mΩ

$ 1.63

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Distributor		SKU		Min	Pkg
DigiKey	3	FDMS3572CT-ND	98	1	Cut Tape	3.710	2.421	1.687	1.365	1.365
Newark	2	FDMS3572	0	1	Cut Tape	3.570	2.340	1.630	1.630	1.630
Onlinecomponents.com		FDMS3572	0	750	Bulk				3.030	1.110
Future Electronics		FDMS3572	0	3K	Tape & Reel					1.990
Master Electronics		FDMS3572	0	750					3.030	1.110

Inventory History

3 month trend: -1.81%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDMS3572.

IHS

Datasheet7 pages2 years ago

Datasheet7 pages19 years ago

onsemi

element14 APAC

Farnell

Fairchild Semiconductor

Inventory History

3 month trend:

-1.81%

Supply Chain

Country of OriginThailand

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-11-06

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDMS3572 provided by its distributors.

N-Channel UltraFET Trench® MOSFET 80V, 22A, 16.5mΩ

onsemi

Trans MOSFET N-CH Si 80V 8.8A 8-Pin WDFN EP T/R / MOSFET N-CH 80V 8.8A POWER56

Win Source

Power MOSFET, N Channel, 80 V, 8.8 A, 0.0165 ohm, Power 56, Surface Mount

Avnet

MOSFET, N, SMD, MLP; Transistor Polarity:N Channel; Continuous Drain Current Id:8.8A; Drain Source Voltage Vds:80V; On Resistance Rds(on):16.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.2V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:8.8A; Package / Case:Power 56; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; SMD Marking:FDMS3572; Termination Type:SMD; Voltage Vds Typ:80V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

element14 APAC

UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

Fairchild Semiconductor