onsemi FDMQ8403
$ 1.9
Production
Inventory History
3 month trend: -13.95%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-09-23
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descriptions
Descriptions of onsemi FDMQ8403 provided by its distributors.
PT5 100v/20v NCH Power Trench Mosfet - 12LD MLP, DUAL, NON-JEDEC, 4.5 X 5.0MM.
N-Channel PowerTrench® MOSFET GreenBridge™ Series of High-Efficiency Bridge Rectifiers 100V, 6A, 110mΩ
This quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge.
Transistor MOSFET Array Quad N-CH 100V 9A 12-Pin MLP T/R
Avnet Japan
1.9W 20V 4V@ 250¦ÌA 5nC@ 10V 4N 100V 110m¦¸@ 3A,10V 3.1A 215pF@15V MLP-12 5mm*4.5mm*800¦Ìm
MOSFET, QUAD N CH, 100V, 6A, WDFN-12; Transistor Polarity:Quad N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -13.95%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins12
Number of Terminals12
Weight242.3 mg
Technical
Continuous Drain Current (ID)3.1 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time1.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance215 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation17 W
Manufacturer Package Identifier511CR
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels4
Number of Elements2
PackagingTape and Reel
Power Dissipation1.9 W
Rds On Max110 mΩ
Rise Time1.2 ns
Schedule B8541290080
Turn-Off Delay Time7.2 ns
Turn-On Delay Time4.1 ns
Dimensions
Height800 µm
Length5 mm
Width4.5 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements