onsemi FDMC86012
$ 0.939
Production
Inventory History
3 month trend: +84.75%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
Download onsemi FDMC86012 symbol, footprint, and 3D STEP models from our trusted partners.
| source | eCAD | mCAD | FILES |
|---|---|---|---|
 Component Search Engine | SymbolFootprint | 3D | Download |
 EE Concierge | SymbolFootprint | ||
 SnapEDA | Footprint | Download |
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.
Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-10-11
Lifecycle StatusProduction (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 days ago)
Related Parts
onsemiFDMS8660AS
2.5W(Ta)，104W(Tc) 3V@1mA 83nC@ 10V 1individualNChannel 30V 2.1mΩ@ 28A,10V 5.865pF@15V 8PQFN SMD mount
InfineonBSC020N03LSGATMA1
Power MOSFET, N Channel, 30 V, 176 A, 2 MilliOhms, TDSON, 8 Pins, Surface Mount
Descriptions
Descriptions of onsemi FDMC86012 provided by its distributors.
N-Channel Power Trench® MOSFET 30V, 88A, 2.7mΩ
TAPE REEL/RP5 30V/12V Nch Power Trench MOSFET
N-Channel 30 V 23A (Ta) 2.3W (Ta), 54W (Tc) Surface Mount Power33
Trans MOSFET N-CH 30V 23A 8-Pin Power 33 T/R
MOSFET 30V N-Channel PowerTrench MOSFET
2.3W(Ta), 54W(Tc) 12V 1.5V@250µA 38nC@4.5V 1 N-Ch 30V 2.7mΩ@23A,4.5V 23A 5.075nF@15V PQFN-8 SMD 3.3mm × 3.3mm × 800μm
Power Field-Effect Transistor, 23A I(D), 30V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide a sub logic-level device.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +84.75%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight152.7 mg
Technical
Continuous Drain Current (ID)23 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance2.7 mΩ
Drain to Source Voltage (Vds)30 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance5.075 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation54 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel
Power Dissipation2.3 W
Rds On Max2.7 mΩ
Rise Time11 ns
Schedule B8541290080
Turn-Off Delay Time43 ns
Turn-On Delay Time20 ns
Dimensions
Height800 µm
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Compliance Statements