onsemi FDMA3023PZ

Name: onsemi FDMA3023PZ
Brand: onsemi
SKU: FDMA3023PZ

Dual P-Channel PowerTrench® MOSFET -30V , -2.9A, 90mΩ

$ 0.354

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Distributor		SKU		Min	Pkg
Avnet	2	FDMA3023PZ	36,000	3K						0.313	15h
Future Electronics		FDMA3023PZ	3,000	3K	Tape & Reel					0.420
DigiKey	3	FDMA3023PZCT-ND	2,382	1	Cut Tape	1.360	0.858	0.566	0.400	0.400
Flip Electronics		FDMA3023PZ	36,964								2d
Newark	2	FDMA3023PZ	0	3K	Tape & Reel					0.457

Inventory History

3 month trend: -29.55%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDMA3023PZ.

IHS

Datasheet8 pages3 years ago

Datasheet0 pages0 years ago

Upverter

Newark

Fairchild Semiconductor

onsemi

Inventory History

3 month trend:

-29.55%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-12-17

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDMA3023PZ provided by its distributors.

Dual P-Channel PowerTrench® MOSFET -30V , -2.9A, 90mΩ

onsemi

FDMA3023 Series -30 V -2.9 A 90 mOhm Dual P-Ch. PowerTrench® MOSFET - MicroFET-6

Future Electronics

Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229

IHS

MOSFET, PP CH, 30V, 2.9A, MICROFET2X2; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-2.9A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.071ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-600mV; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6; MSL:MSL 1 - Unlimited

Farnell

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

Fairchild Semiconductor