onsemi FDMA1028NZ

Name: onsemi FDMA1028NZ
Brand: onsemi
SKU: FDMA1028NZ

PowerTrench® MOSFET, Dual N-Channel, 20V, 3.7A, 68mΩ

$ 0.251

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Distributor		SKU		Min	Pkg
Future Electronics		FDMA1028NZ	27,000	3K	Tape & Reel					0.275
Newark	2	FDMA1028NZ	947	1	Cut Tape	0.937	0.584	0.391	0.346	0.346
Verical	5	FDMA1028NZ	1,825	30				0.277	0.200	0.200
Arrow Electronics	2	FDMA1028NZ	2,886	1		0.789	0.534	0.369	0.262	0.262
Rochester Electronics	2	FDMA1028NZ	510,345					0.249	0.207	0.184	12h

Inventory History

3 month trend: -2.13%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDMA1028NZ.

Upverter

Datasheet6 pages3 years ago

IHS

Master Electronics

Farnell

Fairchild Semiconductor

Inventory History

3 month trend:

-2.13%

CAD Models

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Supply Chain

Country of OriginThailand

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-05-26

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDMA1028NZ provided by its distributors.

PowerTrench® MOSFET, Dual N-Channel, 20V, 3.7A, 68mΩ

onsemi

Transistor MOSFET Array Dual N-CH 20V 3.7A 6-Pin MicroFET T/R

Avnet Japan

Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC

Semicontronic

This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

Fairchild Semiconductor

MOSFET, DUAL, N, MLP6; Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):68mohm; Rds(on) Test Voltage Vgs:1V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:MLP-6; Power Dissipation Pd:1.4W; Power Dissipation Pd:1.4W; Pulse Current Idm:6A; SMD Marking:028; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.5V

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