onsemi FDD86369-F085
$ 0.834
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
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Distributor
SKU
Min
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Bulk Pricing
Inventory History
3 month trend: +167%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2015-05-05
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Related Parts
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InfineonIPD90N06S407ATMA2
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Descriptions
Descriptions of onsemi FDD86369-F085 provided by its distributors.
Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET, TO-252AA
PowerTrench® MOSFET, N-Channel, 80 V, 90 A, 7.9 mΩ
150W(Tj) 20V 4V@ 250µA 54nC@ 10 V 1individualNChannel 80V 7.9mΩ@ 80A,10V 90A 2.53nF@40V TO-252AA SMD mount 2.52mm(height)
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +167%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)7.4 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance600 mΩ
Drain to Source Voltage (Vds)80 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.53 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation150 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation150 W
Rds On Max7.9 mΩ
Schedule B8541290080
Turn-Off Delay Time22 ns
Turn-On Delay Time13 ns
Dimensions
Height2.517 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
RatingsAEC-Q101
REACH SVHCAffected
RoHSCompliant
Compliance Statements