Descriptions of onsemi FDD7N20TM provided by its distributors.
N-Channel Power MOSFET, UniFETTM, 200 V, 5 A, 690 mΩ, DPAK
N-Channel 200 V 0.69 Ohm Surface Mount UniFET Mosfet TO-252-3
Power Field-Effect Transistor, 5A I(D), 200V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
43W(Tc) 30V 5V@ 250¦ÌA 6.7nC@ 10 V 1individualNChannel 200V 690m¦¸@ 2.5A,10V 5A 250pF@25V TO-252AA SMD mount 6.73mm*6.22mm*2.39mm
MOSFET, N-CH, 200V, 5A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.58ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Pow
PMIC - AC DC Converters, Offline Switchers 4 (72 Hours) 8-SMD (7 Leads), Gull Wing Tape & Reel (TR) Buck, Buck-Boost, Flyback Surface Mount -40°C~150°C TJ Yes Non-Isolated Current Limiting, Open Loop, Over Load, Over Temperature, Over VolConv AC-DC Single Buck/Buck-Boost/Flyback 85VAC to 265VAC 7-Pin SMD-8C T/R
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.