onsemi FDC6561AN

Name: onsemi FDC6561AN
Brand: onsemi
SKU: FDC6561AN

Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 2.5A, 95mΩ

$ 0.272

Production

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Avnet	3	FDC6561AN	207,000	3K						0.173	4d
Future Electronics	2	FDC6561AN	66,000	3K	Tape & Reel					0.205
Newark	3	FDC6561AN	2,749	1	Cut Tape	1.030	1.030	0.463	0.374	0.374
Verical	3	FDC6561AN	60,000	3K						0.189
Arrow Electronics	2	FDC6561AN	60,000	3K						0.189

Inventory History

3 month trend: +43.00%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDC6561AN.

IHS

Datasheet5 pages0 years ago

Datasheet6 pages3 years ago

Future Electronics

onsemi

Farnell

Newark

Inventory History

3 month trend:

+43.00%

CAD Models

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Supply Chain

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1999-02-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDC6561AN provided by its distributors.

Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 2.5A, 95mΩ

onsemi

Transistor MOSFET Array Dual N-CH 30V 2.5A 6-Pin TSOT-23 T/R

Avnet Japan

Transistor MOSFET N-Channel 30 Volt 2.5A 6-Pin SuperSOT

Jameco

DUAL N-CHANNEL LOGIC LEVEL POWERTRENCH MOSFET Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems.

Fairchild Semiconductor

MOSFET, DUAL, NN, SUPERSOT-6; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):95mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SuperSOT-6; Power Dissipation Pd:960mW; Power Dissipation Pd:960mW; Pulse Current Idm:10A; SMD Marking:FDC6561AN; Termination Type:SMD; Uni / Bi Directional Polarity:NN; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V

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