onsemi FDBL0110N60
$ 3.65
Production
Price and Stock
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Min
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Bulk Pricing
Inventory History
3 month trend: -0.04%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2015-03-17
Lifecycle StatusProduction (Last Updated: 5 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 days ago)
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60V Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package, MG-WDSON-11, RoHS
Descriptions
Descriptions of onsemi FDBL0110N60 provided by its distributors.
N-Channel PowerTrench® MOSFET, 60V, 300A, 1.1mΩ
Trans MOSFET N-CH Si 60V 300A 9-Pin(8+Tab) TO-LL T/R
TO-leadless, MV7, 60V - 8LDS, PSOF, JEDEC MO299, 11.68X9.90MM
场效应管, MOSFET, N沟道, 60V, 300A, 175度 C, 429W;
Power Field-Effect Transistor, 300A I(D), 60V, 0.0011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-299A
429W(Tj) 20V 4V@ 250µA 220nC@ 10 V 1individualNChannel 60V 1.1mΩ@ 80A,10V 300A 13.65nF@30V HPSOF-8 SMD mount 10.48mm*9.9mm*2.4mm
FDBL0110N60 - N-CHANNEL POWERTRE
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -0.04%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins8
Number of Terminals2
Weight850.0521 mg
Technical
Continuous Drain Current (ID)300 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance1.1 mΩ
Drain to Source Voltage (Vds)60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance13.65 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation429 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation429 W
Rds On Max1.1 mΩ
Schedule B8541290080
Turn-Off Delay Time80 ns
Turn-On Delay Time45 ns
Dimensions
Height2.4 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCAffected
RoHSCompliant
Compliance Statements