onsemi FDB8880

Name: onsemi FDB8880
Brand: onsemi
SKU: FDB8880

Trans Mosfet N-ch 30V 11A 3-PIN(2+TAB) D2PAK T/r / Mosfet N-ch 30V 54A TO-263AB

Obsolete

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Distributor		SKU		Min	Pkg
element14 APAC	2	FDB8880	0	1	Cut Tape	1.188*	0.938*	0.797*	0.581*	0.548*	1d
Farnell	2	FDB8880	0	5	Cut Tape		1.039*	0.716*	0.442*	0.432*	18h
Win Source		WS-FDB8880	35,800	215					0.217	0.183	19h
Worldway Electronics		FDB8880	27,443	7	Tape & Reel		0.291	0.282	0.267	0.267	18h
Aztech		FDB8880	2,288			0.540	0.540	0.540	0.540	0.540	14h

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDB8880.

IHS

Datasheet11 pages21 years ago

Datasheet0 pages0 years ago

element14 APAC

onsemi

Farnell

Fairchild Semiconductor

Supply Chain

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2005-02-28

Lifecycle StatusObsolete (Last Updated: 3 days ago)

LTB Date2018-09-30

LTD Date2019-03-31

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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Descriptions

Descriptions of onsemi FDB8880 provided by its distributors.

Trans MOSFET N-CH 30V 11A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 30V 54A TO-263AB

Win Source

N-Channel PowerTrench® MOSFET, 30V, 54A, 11.6mΩ

onsemi

N-Channel 30 V 54 A 11.6 mOhm Surface Mount PowerTrench® Mosfet - TO-263AB

Future Electronics

Power Field-Effect Transistor, 11A I(D), 30V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:54A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:55W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.54mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:D2-PAK; Power Dissipation Pd:55W; Power Dissipation Pd:55W; SMD Marking:FDB8880; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1.2V

element14 APAC

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

Fairchild Semiconductor