onsemi FDA032N08
$ 2.352
Production
Inventory History
3 month trend: +0.18%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-01-26
Lifecycle StatusProduction (Last Updated: 1 week ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 1 week ago)
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Descriptions
Descriptions of onsemi FDA032N08 provided by its distributors.
N-Channel MOSFET, PowerTrench®, 75V, 235A, 3.2mΩ
N-Channel 75 V 235 A 3.2 mOhm Flange Mount PowerTrench® Mosfet - TO-3PN
375W(Tc) 20V 4.5V@250µA 220nC@10V 1 N-Ch 75V 3.2mΩ@75A,10V 120A 15.16nF@25V TO-3PN TH 23.8mm H
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube
Power Field-Effect Transistor, 120A I(D), 75V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Fet 75V 3.2 Mohm To3P Rohs Compliant: Yes
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +0.18%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance3.2 mΩ
Drain to Source Voltage (Vds)75 V
Element ConfigurationSingle
Fall Time121 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance15.16 nF
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation375 W
Rds On Max3.2 mΩ
Resistance3.2 MΩ
Rise Time191 ns
Schedule B8541290080
Turn-Off Delay Time335 ns
Turn-On Delay Time230 ns
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCAffected
RoHSCompliant
Compliance Statements