Infineon IRFB3006PBF

Transistor: N-MOSFET; unipolar; 60V; 270A; 2.1mohm; 375W; -55+175 deg.C; THT; TO220

MOSFET N-CH 60V 195A TO-220AB / Trans MOSFET N-CH Si 60V 270A 3-Pin(3+Tab) TO-220AB Tube

60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Single N-Channel 60V 2.5 mOhm 200 nC HEXFET® Power Mosfet - TO-220-3

NChannel EnhancedMOSTube, Vds=60 V, 270 A, TO-220encapsulation, Through hole mounting, 3Pin

MOSFET, 60V, 195A, 2.5MOHM, 200NC QG, TO-220

Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N-CH, 60V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:270A; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.1mohm; Rds(on) Test Voltage Vgs:20V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:270A; Package / Case:TO-220AB; Power Dissipation Pd:375W; Pulse Current Idm:1080A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. The optimized gate drive options enables designers the flexibility of selecting super, logic or normal level drives.