onsemi FCH060N80-F155

Name: onsemi FCH060N80-F155
Brand: onsemi
SKU: FCH060N80-F155

N-Channel Power MOSFET, SUPERFET® II, 800 V, 58 A, 60 mΩ, TO-247

$ 10.62

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Distributor

SKU

Min

Pkg

Bulk Pricing

Rochester Electronics

USD

USD

113

Bulk

USD

Tube

USD

113

USD

10.620

Inventory History

3 month trend: -16.63%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FCH060N80-F155.

Farnell

Datasheet10 pages5 years ago

Datasheet0 pages0 years ago

IHS

Upverter

Master Electronics

onsemi

Inventory History

3 month trend:

-16.63%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2016-04-28

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FCH060N80-F155 provided by its distributors.

N-Channel Power MOSFET, SUPERFET® II, 800 V, 58 A, 60 mΩ, TO-247

onsemi

MOSFET N-CH 800V 56A TO247 / N-Channel 800 V 56A (Tc) 500W (Tc) Through Hole TO-247-3

Win Source

500W(Tc) 20V 4.5V@5.8mA 350nC@10V N-Ch MOSFET 800V 60mΩ@29A,10V 56A 14.685nF@100V TO-247-3 TH 15.87mm × 4.82mm × 20.82mm

UnikeyIC

Power Field-Effect Transistor, 58A I(D), 800V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Abacus Technologies

Aluminum Electrolytic Capacitors 680μF Radial, Can - SMD ±20% Tape & Reel (TR) FT 0.413 10.50mm Surface Mount Automotive, High Temperature Reflow CAP ALUM 680UF 20% 35V SMD

Utmel Electronic

MOSFET, N CHANNEL, 800V, 58A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.054ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4

Farnell

SuperFET®II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology istailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Fairchild Semiconductor