onsemi BD681S

Name: onsemi BD681S
Brand: onsemi
SKU: BD681S

Medium Power NPN Darlington Bipolar Power Transistor

$ 0.296

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor	SKU		Min
Rochester Electronics	BD681S	692				0.357	0.296	0.264	1d
Farnell	BD681S...	0	1	0.714*	0.577*	0.335*	0.226*	0.219*	1d
Win Source	WS-BD681S	3,180	90			0.578	0.385	0.385	1h
Worldway Electronics	BD681S	18,340	7		0.051	0.049	0.047	0.047	23h
Fmall Co., Limited	BD681S	9,110		0.223	0.223	0.209	0.197	0.180	5d

Inventory History

3 month trend: -52.99%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi BD681S.

onsemi

Datasheet4 pages12 years ago

Datasheet4 pages17 years ago

IHS

element14 APAC

Farnell

Fairchild Semiconductor

Inventory History

3 month trend:

-52.99%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiBD681S

onsemiBD681G

Price @ 1000

$ 0.296

$ 0.457

Stock

147,760

669,970

Authorized Distributors

Mount

Through Hole

Case/Package

TO-126

TO-225

Polarity

NPN

Collector Emitter Breakdown Voltage

100 V

Max Collector Current

4 A

Transition Frequency

10 MHz

Collector Emitter Saturation Voltage

2.5 V

hFE Min

750

Power Dissipation

40 W

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-12-20

Lifecycle StatusObsolete (Last Updated: 6 days ago)

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)

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Descriptions

Descriptions of onsemi BD681S provided by its distributors.

Medium Power NPN Darlington Bipolar Power Transistor

onsemi

BD Series NPN 40 W 100 V 4 A Through Hole Epitaxial Silicon Transistor - TO-126

Future Electronics

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

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Trans Darlington NPN 100V 4A 40000mW 3-Pin(3+Tab) TO-126 Bulk

Verical

Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:40W; DC Collector Current:4A; DC Current Gain Max (hfe):750; No. of Pins:3; Collector Emitter Saturation Voltage Vce(sat):2.5V;RoHS Compliant: Yes

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NPN Epitaxial Silicon Transistor Product Highlights: Medium Power Darlington TR Complement to BD676A, BD678A, BD680A and BD682 respectively

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