onsemi BD237STU
Obsolete
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.368
Stock
73,842
11,701,675
Authorized Distributors
1
6
Mount
Through Hole
-
Case/Package
TO-126
TO-225
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
80 V
80 V
Max Collector Current
2 A
2 A
Transition Frequency
3 MHz
3 MHz
Collector Emitter Saturation Voltage
600 mV
600 mV
hFE Min
25
25
Power Dissipation
25 W
25 W
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2019-10-12
LTD Date2020-04-12
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
Descriptions
Descriptions of onsemi BD237STU provided by its distributors.
2.0 A, 100 V, 25W NPN Epitaxial Silicon Bipolar Power Transistor
Bipolar Transistors (BJT); BD237STU; ON SEMICONDUCTOR; NPN; 3; 80 V; 2 A
TRANS NPN 80V 2A TO-126 / Trans GP BJT NPN 80V 2A 25000mW 3-Pin(3+Tab) TO-126 Tube
BD Series NPN 25 W 80 V 2 A Through Hole Epitaxial Transistor - TO-126
Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
600mV@ 100mA,1A NPN 25W 5V 100μA 100V 80V 2A TO-126-3 Through hole mounting 8mm*3.25mm*11mm
TRANSISTOR, BIPOL, NPN, 80V, TO-225AA-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 25W; DC Collector Current: 2A; DC Current Gain hFE: 25hFE; Transi
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageTO-126
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight761 mg
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage600 mV
Collector Emitter Voltage (VCEO)80 V
Current Rating2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency3 MHz
Gain Bandwidth Product3 MHz
hFE Min25
Max Breakdown Voltage400 V
Max Collector Current2 A
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation25 W
Transition Frequency3 MHz
Voltage Rating (DC)80 V
Dimensions
Height11 mm
Length8 mm
Width3.25 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Compliance Statements