onsemi BC33740TA

Name: onsemi BC33740TA
Brand: onsemi
SKU: BC33740TA

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

$ 0.076

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	2	82C0367	194	1		0.095	0.095	0.095	0.095	0.095	2d
Newark		BC33740TA	194	1	Cut Tape	0.305	0.190	0.124	0.086	0.086
Verical	3	BC33740TA	8,000	2K						0.039
Arrow Electronics	2	BC33740TA	4,143	1		0.251	0.140	0.093	0.061	0.045
Master Electronics		BC33740TA	2,000	2K						0.053

Inventory History

3 month trend: -20.93%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi BC33740TA.

JRH Electronics

Datasheet0 pages0 years ago

IHS

Upverter

Fairchild Semiconductor

onsemi

Inventory History

3 month trend:

-20.93%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiBC33740TA

onsemiBC33740BU

Price @ 1000

$ 0.076

$ 0.06

Stock

544,151

1,060,650

Authorized Distributors

Mount

Through Hole

Case/Package

TO-92

Polarity

NPN

Collector Emitter Breakdown Voltage

45 V

Max Collector Current

800 mA

Transition Frequency

100 MHz

Collector Emitter Saturation Voltage

700 mV

hFE Min

170

Power Dissipation

625 mW

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2002-07-26

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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onsemiBC33716BU

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Descriptions

Descriptions of onsemi BC33740TA provided by its distributors.

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

IHS

Bipolar Transistors (BJT); BC33740TA; ON SEMICONDUCTOR; NPN; 3; 45 V; 800 mA

Maritex

BC337 Series 45 V CE Breakdown .8 A NPN Epitaxial Silicon Transistor TO-92

Future Electronics

BIPOLAR Transistor, NPN, 45V, TO-92; Tra; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V;

element14 APAC

45V 625mW 800mA 250@100mA1V 100MHz 700mV@500mA50mA NPN +150¡Í@(Tj) TO-92 Bipolar Transistors - BJT ROHS

Dasenic

This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics.

Fairchild Semiconductor

Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:45V; Transition Frequency Typ, ft:100MHz; Power Dissipation, Pd:625mW; DC Collector Current:800mA; DC Current Gain Max (hfe):100; No. of Pins:3 ;RoHS Compliant: Yes

Newark