onsemi BC33716TA

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
$ 0.07
Production
Manufacturer PageDatasheet

Price and Stock

See all price breaks
DistributorSKUMinPkg
Future ElectronicsBC33716TA34,0002KAmmo
AvnetBC33716TA2,00018K
5d
NewarkBC33716TA3,7441
Verical
6
BC33716TA16,0002K
Arrow ElectronicsBC33716TA1,7831

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi BC33716TA.

IHS

Datasheet5 pages2 years ago
Datasheet0 pages0 years ago

Newark

Upverter

onsemi

Fairchild Semiconductor

Inventory History

3 month trend:
-1.13%
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Alternate Parts

This Part
Alternate Parts
onsemiBC33716TA
onsemiBC33716BU
onsemiBC33716BU
Price @ 1000
$ 0.07
$ 0.058
$ 0.058
Stock
3,425,187
820,998
820,998
Authorized Distributors
6
6
6
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-92-3
TO-92
TO-92
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
45 V
45 V
45 V
Max Collector Current
800 mA
800 mA
800 mA
Transition Frequency
100 MHz
100 MHz
100 MHz
Collector Emitter Saturation Voltage
700 mV
700 mV
700 mV
hFE Min
100
100
100
Power Dissipation
625 mW
625 mW
625 mW

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-07-26
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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onsemiBC33716BU
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onsemiBC33740BU
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 250 @ 100mA 1V 100nA 625mW 100MHz
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Descriptions

Descriptions of onsemi BC33716TA provided by its distributors.

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
IHS
BC337 Series 45 V CE Breakdown .8 A NPN Epitaxial Silicon Transistor TO-92
Future Electronics
Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 Fan-Fold
Verical
45V 625mW 800mA 100@100mA1V 100MHz 700mV@500mA50mA NPN +150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
Dasenic
TRANSISTOR, BIPOL, NPN, 45V, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 625mW; DC Collector Current: 800mA; DC Current Gain hFE: 60hFE; Tr
Farnell
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics.
Fairchild Semiconductor
RF Bipolar Transistor; Transistor Polarity:N Channel; Collector Emitter Voltage, V(br)ceo:45V; Package/Case:D2-PAK; DC Current Gain Min (hfe):100; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes
Newark

Images

Newark
element14 APAC
Farnell
TME
TME
RS
TME
Conrad
Newark
LZChips
Rochester Electronics
Conrad

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd