onsemi BC337

Name: onsemi BC337
Brand: onsemi
SKU: BC337

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

$ 0.077

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	BC337	510				0.092	0.077	0.068	11h
Avnet		BC337	0	4K						5d
element14 APAC		BC337	0	5		0.312*	0.161*	0.079*	0.070*	1d
Microchip USA		BC337	218	600	Tray			1.105	1.105	6d
Worldway Electronics		BC337	7,537	7	Bulk	0.009	0.009	0.009	0.009	11h

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi BC337.

Upverter

Datasheet5 pages16 years ago

IHS

onsemi

Fairchild Semiconductor

Farnell

Inventory History

3 month trend:

+0.00%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiBC337

onsemiBC337G

Price @ 1000

$ 0.077

$ 0.043

Stock

283,264

2,354,575

Authorized Distributors

Mount

Through Hole

Case/Package

TO-92

TO-92-3

Polarity

NPN

Collector Emitter Breakdown Voltage

45 V

Max Collector Current

800 mA

Transition Frequency

100 MHz

210 MHz

Collector Emitter Saturation Voltage

700 mV

hFE Min

100

Power Dissipation

1.5 W

625 mW

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1991-08-15

Lifecycle StatusObsolete (Last Updated: 5 years ago)

LTB Date2012-02-23

LTD Date2012-08-23

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)

Related Parts

onsemiBC33725TA

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Details

onsemiBC33716TA

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Details

onsemiBC33725BU

Bulk Through Hole NPN Single Bipolar (BJT) Transistor 160 @ 100mA 1V 100nA 625mW 100MHz

Details

Descriptions

Descriptions of onsemi BC337 provided by its distributors.

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

IHS

Bulk Through Hole Single 1 Bipolar (BJT) Transistor 800mA 625mW 210MHz 50V

Fly-Wing Technology

Trans GP BJT NPN 45V 0.8A 3-Pin TO-92 Bulk

Verical

PNP Bipolar Transistor. ONSSPCTRNSTVU6M5P;

Avnet

Bipolar Transistor; Transistor Polarity:NPN; DC Current Gain Min (hfe):100; Package/Case:TO-92; C-E Breakdown Voltage:45V; DC Collector Current:0.8A; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes

Newark

This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics.

Fairchild Semiconductor

TRANSISTOR,NPN,45V,0.8A,TO92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:625mW; DC Collector Current:800mA; DC Current Gain hFE:630; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:700mV; Continuous Collector Current Ic Max:500mA; Current Ic Continuous a Max:500mA; Current Ic hFE:100mA; Gain Bandwidth ft Typ:200MHz; Hfe Min:100; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:f; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:800mW; Termination Type:Through Hole; Voltage Vcbo:50V

element14 APAC