onsemi BC33725BU
$ 0.045
Production
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Datasheets & Documents
Download datasheets and manufacturer documentation for onsemi BC33725BU.
Official Datasheet2 years ago
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.045
$ 0.082
$ 0.082
Stock
1,327,386
3,152,467
3,152,467
Authorized Distributors
6
6
6
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-92
TO-92
TO-92
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
45 V
45 V
45 V
Max Collector Current
800 mA
800 mA
800 mA
Transition Frequency
100 MHz
100 MHz
100 MHz
Collector Emitter Saturation Voltage
700 mV
700 mV
700 mV
hFE Min
160
160
160
Power Dissipation
625 mW
625 mW
625 mW
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-07-26
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Related Parts
onsemiKSD1616LBU
Bulk Through Hole NPN KSD1616 Bipolar (BJT) Transistor 300 @ 100mA 2V 1A 750mW 160MHz
Descriptions
Descriptions of onsemi BC33725BU provided by its distributors.
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 160 @ 100mA 1V 100nA 625mW 100MHz
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
In a Pack of 100, ON Semi BC33725BU NPN Transistor, 800 mA, 50 V, 3-Pin TO-92
BC337 Series 45 V CE Breakdown .8 A NPN Epitaxial Silicon Transistor TO-92
Transistor GP BJT NPN 45V 0.8A 3-Pin TO-92 Bulk
Avnet Japan
Bipolar Transistors - BJT NPN 45V 800mA HFE/400
General Purpose Transistor, TO-92, NPN, 45V
45V 625mW 800mA 160@100mA1V 100MHz NPN 700mV@500mA50mA +150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
TRANSISTOR, BIPOL, NPN, 45V, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 625mW; DC Collector Current: 800mA; DC Current Gain hFE: 100hFE; T
onsemi NPNTransistor, TO-92encapsulation, Through hole mounting, Maximum DC collector current800mA, maximum collector-emission voltage50 V
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-92
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight179 mg
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage700 mV
Collector Emitter Voltage (VCEO)45 V
Current Rating800 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min160
Max Collector Current800 mA
Max Frequency100 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation625 mW
Schedule B8541210080
Transition Frequency100 MHz
Voltage Rating (DC)45 V
Dimensions
Height5.33 mm
Length4.58 mm
Width3.86 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements