Nexperia BSP62,115

Name: Nexperia BSP62,115
Brand: Nexperia
SKU: BSP62,115

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

$ 0.435

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Distributor		SKU		Min	Pkg
Arrow Electronics		BSP62,115	702	1		0.133	0.132	0.132	0.132	0.132
Verical		BSP62,115	702	9			0.594	0.594	0.594	0.594
TME	2	BSP62.115	0	1		0.710	0.501	0.333	0.333	0.333	1h
Newark	2	BSP62,115	0	1	Cut Tape	1.900	1.210	1.060	1.060	1.060
Avnet		BSP62,115	0	5K							5h

Inventory History

3 month trend:

-63.71%

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Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.75

Introduction Date1997-09-01

Lifecycle StatusProduction (Last Updated: 2 years ago)

Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)

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Descriptions

Descriptions of Nexperia BSP62,115 provided by its distributors.

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

IHS

BSP62 Series 80 V 1 A SMT PNP Darlington Transistor - SOT-223

Future Electronics

Transistor Darlington PNP 80V 1A 4-Pin (3+Tab) SC-73 T/R

North Star Micro

TRANS PNP 90V 0.5A SOT223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency Typ ft:200MHz; Power Dissipation Pd:1.25W; DC Collector Current:-1A; DC Current Gain hFE:2000; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:-1.3V; Current Ic Continuous a Max:-500mA; Gain Bandwidth ft Typ:200MHz; Hfe Min:2000; Package / Case:SOT-223; Power Dissipation Pd:1.25W; Termination Type:SMD; Transistor Type:Darlington

element14 APAC