Infineon SPD07N20GBTMA1

Name: Infineon SPD07N20GBTMA1
Brand: Infineon
SKU: SPD07N20GBTMA1

SIPMOSÒ Power Transistor Features N channel Enhancement mode Avalanche rated

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Farnell	2	SPD07N20GBTMA1	0	5	Cut Tape		1.241*	1.097*	1.030*	1.009*	21h
Win Source	2	WS-SPD07N20G	22,000	50				1.014	0.676	0.676	22h
Worldway Electronics	2	SPD07N20G	13,533	7			0.854	0.828	0.785	0.785	21h
Aztech		SPD07N20GBTMA1	8,833			5.950	5.950	5.950	5.950	5.950	17h
Anlinkda		SPD07N20G	24,860			1.231	1.102	0.937	0.927	0.886	1d

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon SPD07N20GBTMA1.

IHS

Datasheet10 pages21 years ago

Datasheet10 pages15 years ago

element14 APAC

_legacy Avnet

CAD Models

Download Infineon SPD07N20GBTMA1 symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
EE Concierge	SymbolFootprint

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Lifecycle StatusObsolete (Last Updated: 4 months ago)

Related Parts

STMicroelectronicsSTD7NS20T4

N-channel 200 V, 0.35 Ohm typ., 7 A Power MOSFET in DPAK package

Details

onsemiIRLR120ATF

Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 8.4A Tc 8.4A 35W 9ns

Details

VishaySUD08P06-155L-GE3

Single P-Channel 60 V 155 mOhm Surface Mount TrenchFET Power Mosfet - TO-252

Details

onsemiSFR9024TM

Tape & Reel (TR) Surface Mount P-Channel Single Mosfet Transistor 7.8A Tc 7.8A 2.5W 20ns

Details

onsemiFDD2670

N-Channel PowerTrench® MOSFET 200V 3.6A, 130mΩ

Details

InfineonSPD08N50C3ATMA1

Trans MOSFET N-CH 500V 7.6A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 500V 7.6A DPAK

Details

Descriptions

Descriptions of Infineon SPD07N20GBTMA1 provided by its distributors.

SIPMOSÒ Power Transistor Features N channel Enhancement mode Avalanche rated

Win Source

Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

MOSFET, N-CH, 200V, 7A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power

Farnell

Infineon's 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS compliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS); LED lighting power supply

Infineon