Infineon SPD02N80C3ATMA1

Name: Infineon SPD02N80C3ATMA1
Brand: Infineon
SKU: SPD02N80C3ATMA1

42KW 20V 3.9V 9NC@ 10V 2N 800V 2.7¦¸@ 10V 2A 290PF@ 25V TO-252 6.5MM*622CM*2.51MM

$ 0.468

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Distributor		SKU		Min	Pkg
Newark		SPD02N80C3ATMA1	11,607	1	Cut Tape	1.260	0.879	0.617	0.468	0.468
Arrow Electronics	4	SPD02N80C3ATMA1	2,495	1		0.845	0.783	0.577	0.510	0.510
Rutronik		TMOSP11238	5,000	2500						0.405	3h
Rochester Electronics		SPD02N80C3ATMA1	580					0.538	0.446	0.398	20h
DigiKey	3	SPD02N80C3ATMA1CT-ND	6,965	1	Cut Tape	1.740	1.105	0.738	0.530	0.530

Inventory History

3 month trend: -12.58%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon SPD02N80C3ATMA1.

IHS

Datasheet10 pages13 years ago

Datasheet10 pages0 years ago

Newark

Farnell

Inventory History

3 month trend:

-12.58%

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Supply Chain

Country of OriginGermany, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-08-10

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon SPD02N80C3ATMA1 provided by its distributors.

42KW 20V 3.9V 9nC@ 10V 2N 800V 2.7¦¸@ 10V 2A 290pF@ 25V TO-252 6.5mm*622cm*2.51mm

Unikeyic (ICkey)

Power Field-Effect Transistor, 2A I(D), 800V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Semicontronic

MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:2A; Package / Case:TO-252; Power Dissipation Pd:42W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2 / Drain-Source Voltage (Vds) V = 800 / ON Resistance (Rds(on)) Ohm = 2.7 / Gate-Source Voltage V = 20 / Fall Time ns = 18 / Rise Time ns = 15 / Turn-OFF Delay Time ns = 72 / Turn-ON Delay Time ns = 15 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 42

Distrelec

800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar

Infineon