Infineon IRS2336SPBF

IRS2336 Series 20 V 350 mA High Voltage 3 Phase Gate Driver IC - SOIC-28

Tube IRS2336SPBF Half-Bridge 1996 gate driver 125ns -40C~150C TJ 200mA 350mA 1.6W

600 V three-phase gate driver IC with enable, over current protection and fault reporting, SOIC 28W, RoHS

MOSFET DRVR 600V 0.35A 6-OUT Hi/Lo Side 3-Phase Brdg Inv 28-Pin SOIC W Tube

High voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications

Driver IC; Device Type:High and Low Side; Supply Voltage Min:10V; Supply Voltage Max:20V; Termination Type:SMD; Package/Case:28-WSOIC; No. of Pins:28; Operating Temperature Range:-40°C to +125°C; Delay Matching:50ns ;RoHS Compliant: Yes

GATE DRIVER, HV, 3PHASE, 28-SOIC; Device Type:IGBT / MOSFET; Power Type:Three Phase; Module Configuration:High Side; Peak Output Current:350mA; Input Delay:530ns; Output Delay:530ns; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:28; Operating Temperature Range:-40°C to +125°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2011); Base Number:2336

600 V Three Phase Driver IC with typical 0.2 A source and 0.35 A sink currents in 28 Lead SOICWB package for IGBTs and MOSFETs. Also available in 44 Lead PLCC. | Summary of Features: Drives up to six IGBT/MOSFET power devices; Gate drive supply range from 10 V to 20 V (IRS2336); Gate drive supply range from 11.5 V to 20 V (IRS23364 ) option available; Integrated bootstrap functionality; Over-current protection; Over-temperature shutdown input; Advanced input filter; Integrated deadtime protection; Shoot-through (cross conduction) protection; Undervoltage lockout for Vcc and Vbs; Enable/disable input and fault reporting; Adjustable fault clear timing; Separate logic and power grounds; 3.3 V input logic compatible; Tolerant to negative transient voltage; Designed for use with bootstrap power supplies; Matched propagation delays for all channels; -40C to 125C operating range