Infineon IRLU2703PBF

Name: Infineon IRLU2703PBF
Brand: Infineon
SKU: IRLU2703PBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 0.045 Ohm; Id 23A; I-pak (TO-251AA); Pd 45W

Obsolete

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRLU2703PBF	0	1125	Bulk					0.830	1d
Farnell		IRLU2703PBF	0	5			1.088*	1.044*	0.979*	0.957*	1d
Win Source	2	WS-IRLU2703	17,358	60				0.965	0.644	0.644	9h
Worldway Electronics	2	IRLU2703PBF	18,418	7	Tube		0.252	0.244	0.232	0.232	8h
Esaler Electronic		IRLU2703	75			0.994	0.985	0.976	0.967	0.958	9h

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLU2703PBF.

IHS

Datasheet12 pages21 years ago

Datasheet11 pages21 years ago

Datasheet11 pages22 years ago

DigiKey

RS (Formerly Allied Electronics)

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1998-01-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2008-03-13

LTD Date2008-09-13

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Descriptions

Descriptions of Infineon IRLU2703PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.045Ohm;ID 23A;I-Pak (TO-251AA);PD 45W

RS (Formerly Allied Electronics)

Single N-Channel 30 V 45 W 15 nC Hexfet Power Mosfet Through Hole - TO-251AA

Future Electronics

30V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

Infineon SCT

HEXFET Power MOSFET Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

ComSIT Distribution GmbH

MOSFET Operating temperature: -55...175 °C Drive: logic level Housing type: IPAK Polarity: N Variants: Enhancement mode Power dissipation: 45 W

Distrelec

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

Infineon

MOSFET, N, 30V, 22A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:30V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:38W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:23A; Junction to Case Thermal Resistance A:3.3°C/W; On State resistance @ Vgs = 10V:45mohm; Package / Case:IPAK; Power Dissipation Pd:38W; Power Dissipation Pd:38W; Pulse Current Idm:96A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V

element14 APAC