Infineon IRLR8256PBF

Name: Infineon IRLR8256PBF
Brand: Infineon
SKU: IRLR8256PBF

Mosfet, 25V, 81A, 5.7MOHM, 10 Nc Qg, Logic Level, D-pak

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRLR8256PBF	0	1125	Bulk					1.610	2h
Farnell	IRLR8256PBF	0	1		0.587*	0.504*	0.504*	0.504*	0.504*	10h
Win Source	WS-IRLR8256PBF	86,740	100				0.524	0.349	0.349	12h
Worldway Electronics	IRLR8256PBF	10,481	7	Tube		0.121	0.118	0.111	0.111	1d
Fly-Wing Technology	IRLR8256PBF	58,718			0.672	0.551	0.534	0.500	0.500	3d

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLR8256PBF.

IHS

Datasheet11 pages14 years ago

Datasheet12 pages14 years ago

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-12-19

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

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Descriptions

Descriptions of Infineon IRLR8256PBF provided by its distributors.

MOSFET, 25V, 81A, 5.7MOHM, 10 NC QG, LOGIC LEVEL, D-PAK

RS (Formerly Allied Electronics)

25V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

MOSFET, N-CH 25V 81A DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:25V; On Resistance Rds(on):5.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:63W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:81A; Package / Case:D-PAK; Power Dissipation Pd:63W; Power Dissipation Pd:63W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V

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