Infineon IRLR2908TRLPBF
$ 1.6
Obsolete
Price and Stock
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Inventory History
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CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRLR2908TRLPBF.
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-02-13
Lifecycle StatusObsolete (Last Updated: 8 months ago)
LTB Date2020-01-31
LTD Date2021-07-31
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Descriptions
Descriptions of Infineon IRLR2908TRLPBF provided by its distributors.
Single N-Channel 80 V 28 mOhm 22 nC HEXFET® Power Mosfet - TO-252-3
80V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 30A I(D), 80V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
Mosfet, N Channel, 80V, 39A, Dpak; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Infineon Technologies IRLR2908TRLPBF
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals1
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance28 mΩ
Drain to Source Voltage (Vds)80 V
Element ConfigurationSingle
Fall Time55 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.89 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation120 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Elements1
On-State Resistance28 mΩ
Package Quantity3000
Power Dissipation120 W
Rds On Max28 mΩ
Resistance28 MΩ
Rise Time95 ns
Threshold Voltage1 V
Turn-Off Delay Time36 ns
Turn-On Delay Time12 ns
Dimensions
Height2.26 mm
Length6.7056 mm
Width6.22 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRLR2908TRLPBF.
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Compliance Statements